While in Russia, preparing for the transition to the standard 5G mobile communications, Institute of electronic technology Voronezh, included in the holding company Ruselectronics, begins to release 5G-effect transistors.
The enterprise reported that the output power of the devices ranges from 5 to 50 W, the gain in power from 9 to 13 dB drain efficiency — not less than 45% at a test frequency of 4 GHz and 2.9 GHz. Transistors manufactured by the Voronezh research Institute, fully interchangeable with import analogues, therefore, suitable for any type of equipment without the need for additional improvements. Domestic transistors have already been tested on radio stations, radar equipment, airports, and drones, where it showed excellent performance. Now the products of the Voronezh research Institute tested twenty different companies.
Through the use of transistors based on gallium nitride, the developers managed to reduce the size of power supplies, adapters and chargers. Because of reduced dimensions and reduced weight, so new products can be used in various devices, transport and electrical engineering.