Power transistor eGaN FET EPC2046, designed for a voltage of 200 V,...

Power transistor eGaN FET EPC2046, designed for a voltage of 200 V, 12 times less than that of a silicon MOSFET transistor

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Power transistor eGaN FET EPC2046, designed for a voltage of 200 V, 12 times less than that of a silicon MOSFET transistor

EPC company has introduced a powerful EPC2046 transistor, designed for using in the circuits of wireless charging, voltage converters, power supplies, inverters for solar cells and other similar applications. A transistor designed for voltage up to 200 V and pulse output current up to 55 A. the resistance in the open state does not exceed 25 mW.

Size EPC2046 in the performance of CSP, providing a good cooling of 0.95 x 2.76 mm., the Manufacturer said that it is 12 times smaller than that of a silicon MOSFET device in a plastic housing having comparable parameters. In EPC2046 used gallium nitride.